Download Radiation effects and soft errors in integrated circuits and by Daniel M. Fleetwood PDF

By Daniel M. Fleetwood

This e-book presents an in depth therapy of radiation results in digital units, together with results on the fabric, equipment, and circuit degrees. The emphasis is on brief results brought on by unmarried ionizing debris (single-event results and delicate blunders) and results produced through the cumulative strength deposited via the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal–oxide–semiconductor (MOS), and compound semiconductor applied sciences are mentioned. as well as contemplating the categorical concerns linked to high-performance units and applied sciences, the booklet contains the history fabric precious for realizing radiation results at a extra common point.

Show description

Read Online or Download Radiation effects and soft errors in integrated circuits and electronic devices PDF

Best semiconductors books

Practical FPGA Programming in C

C-based concepts for construction high-performance, FPGA-accelerated software program applicationsCircuits, units, and SystemsC-based concepts for Optimizing FPGA functionality, layout Flexibility, and Time to MarketForward written by means of Clive "Max" Maxfield. High-performance FPGA-accelerated software program purposes are a transforming into call for in fields starting from communications and picture processing to biomedical and medical computing.

Concepts in Spin Electronics

These days details know-how is predicated on semiconductor and feromagnetic fabrics. details processing and computation are according to electron cost in semiconductor transistors and built-in circuits, and knowledge is saved on magnetic high-density not easy disks in accordance with the physics of the electron spins.

Mid-infrared Semiconductor Optoelectronics (Springer Series in Optical Sciences)

Optoelectronic units working within the mid-infrared wavelength variety provide purposes in a number of components from environmental gasoline tracking round oil rigs to the detection of narcotics. they can even be used for free-space optical communications, thermal imaging purposes and the advance of "homeland defense" measures.

Electrochemical Micromachining for Nanofabrication, MEMS and Nanotechnology

Electrochemical Micromachining for Nanofabrication, MEMS and Nanotechnology is the 1st publication exclusively devoted to electrochemical micromachining (EMM). It starts off with basics, thoughts, tactics, and stipulations, carrying on with with in-depth discussions of mechanisms of fabric removing, together with an empirical version at the fabric elimination price for EMM (supported through experimental validation).

Additional resources for Radiation effects and soft errors in integrated circuits and electronic devices

Sample text

Achieving the target voltage-controlled oscillator (VCO) maximum frequency was strongly dependent on the type of transistor used and which node was enclosed. Figure 9 shows the circuit schematic for the VCO. The NMOS stacks of MN5MN7 and MN6-MN8 were initially realized using ringed-drain transistors for layout convenience (the drain was enclosed by the polysilicon, rather than the source). 4,13 Figure 10 shows simulation results for three different cases of VCO performance. The top trace shows the result when standard device models are used for the ringed-source (ringed-drain) transistors in the VCO.

Increased total dose in bipolar junction transistors results in increased noise and degraded P (or increased base current). As minority carrier devices, BJTs are also susceptible to displacement damage from proton or neutron irradiation. 25 urn SiGe BiCMOS process have demonstrated minimal performance degradation at proton fluences as high as 5 x 17 p/cm2. 01 rad(Si)/s or less. BiCMOS (or bipolar) processes should be carefully characterized for ELDRS effects to accurately predict the performance degradation of mixed-signal circuits in low dose rate environments.

In addition, there is currently no indication that analog and RF circuits will be able to take advantage of the same components and processes that digital circuits will eventually use. The need for high transconductance, low 1/f noise, and high output resistance already puts severe limits on the minimum gate lengths of MOS transistors used in analog circuits. Even today, an analog circuit with a few hundred components may require more chip area than a digital circuit with millions of transistors.

Download PDF sample

Rated 4.44 of 5 – based on 29 votes