By Sung-Min Hong
The publication covers all elements from the growth of the Boltzmann shipping equation with harmonic features to software to units, the place delivery within the bulk and in inversion layers is taken into account. the real points of stabilization and band constitution mapping are mentioned intimately. this can be performed not just for the entire band constitution of the 3D k-space, but additionally for the warped band constitution of the quasi 2nd gap fuel. effective equipment for development the Schrödinger equation for arbitrary floor or pressure instructions, gridding of the second k-space and fixing it including the opposite equations are presented.
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Additional resources for Deterministic Solvers for the Boltzmann Transport Equation
Stochastic Process in Physics and Chemistry. North-Holland, Amsterdam (1981) 3. : Monte Carlo calculation of electron transport in solids. Semiconduct. Semimet. 14, 249–309 (1979) 4. : The Monte Carlo Method for Semiconductor Device Simulation. Springer, New York (1989) 5. : A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion. J. Comput. Electron 8(3), 225–241 (2009) 6. : A deterministic Boltzmann equation solver based on a higher-order spherical harmonics expansion with full-band effects.
Scattering results in fluctuations of the distribution function, which in turn lead to fluctuations of the expected values. When stationary bias conditions are assumed, noise can be calculated directly in the frequency domain. The deviation of the particle distribution function at angular frequency ! t . The fluctuations are assumed to be so small that they can be calculated based on the linearization of the BTE. 141) where i is the imaginary unit number, ! 9) ıF D rr . 142) 6 Noise analysis under large-signal conditions has been demonstrated for bulk simulations within the framework of the deterministic BTE solver in .
14) 16 2 The Boltzmann Transport Equation and Its Projection onto Spherical Harmonics For device simulations, suitable boundary conditions at the device boundaries are required. The Neumann boundary condition is imposed on a non-contact boundary. r; k/ . x/ the step function, and f eq the equilibrium distribution specified by the particle quasi-Fermi level of the contact. When the Pauli principle is considered in the simulation, f eq is given by the Fermi-Dirac distribution, otherwise by the Maxwell–Boltzmann distribution.