By Trans Tech Publications
Read or Download Defects and diffusion in semiconductors. XIV PDF
Similar semiconductors books
C-based options for development high-performance, FPGA-accelerated software program applicationsCircuits, units, and SystemsC-based concepts for Optimizing FPGA functionality, layout Flexibility, and Time to MarketForward written through Clive "Max" Maxfield. High-performance FPGA-accelerated software program purposes are a becoming call for in fields starting from communications and picture processing to biomedical and medical computing.
These days info know-how is predicated on semiconductor and feromagnetic fabrics. info processing and computation are according to electron cost in semiconductor transistors and built-in circuits, and data is saved on magnetic high-density not easy disks in response to the physics of the electron spins.
Optoelectronic units working within the mid-infrared wavelength diversity provide purposes in quite a few parts from environmental fuel tracking round oil rigs to the detection of narcotics. they can even be used for free-space optical communications, thermal imaging functions and the advance of "homeland protection" measures.
Electrochemical Micromachining for Nanofabrication, MEMS and Nanotechnology is the 1st publication exclusively devoted to electrochemical micromachining (EMM). It starts with basics, recommendations, methods, and prerequisites, carrying on with with in-depth discussions of mechanisms of fabric elimination, together with an empirical version at the fabric removing expense for EMM (supported through experimental validation).
- Single Quantum Dots: Fundamentals, Applications, and New Concepts
- Design of high-performance microprocessor circuits
- Heavily Doped Semiconductors
- Luminescence: The Instrumental Key to the Future of Nanotechnology
Additional resources for Defects and diffusion in semiconductors. XIV
Cantor, Mater. , 40 (1998) 97–109. A. Legadevi1, A. , Samarium (Sm) and Dysprosium (Dy) showed the n-type semiconductor, was synthesized by sol- gel technique and sintered in a microwave furnace in order to enhance the electrical and magnetic behavior of this material as per the requirement of Microstrip patch antenna. The structural, surface morphological and chemical compositional properties of this material were investigated by X-ray diffraction (XRD), SEM and E-DAX. E-DAX was used for the quantification of elements (Mg, Dy, Sm and Fe) near the detection limit.
2 represents the relation between α parameter and Gd doping ratio at different sintering temperatures. The values at each curve of Fig. 1 are Gd doping % and non-linearity coefficient α. Clear from Figs. 1 and 2 that α is maximum (78) at 6% doping ratio and sintering temperature 1200oC. Moreover the leakage current Lg and the breakdown electric field Eo are improved at the low sintering temperature 1200oC as shown in Fig. 3. XRD spectra of the samples 94% ZnO - 6% Gd2O3 sintered at 1200oC, 1300oC and 1400oC are shown in Fig.
8). 03. and then start increases. It can be seen that anisotropy constant and initial permeability show an inverse trend with increase in Dy3+–Sm2+ doping concentration. This indicates that, the initial permeability is inversely proportional to magneto crystalline anisotropy constant, obeying μ3 α 1/K/ . DC Resistivity Studies: DC electrical resistivity is an important property for microstrip patch antenna design. Resistivity deceases with increasing the Dy3+– Sm2+ doping concentration according to Arrhenius equation .