By John P. Uyemura (auth.)
CMOS common sense Circuit Design is an up to date remedy of the research and layout of CMOS built-in electronic good judgment circuits. it's a self- contained remedy that covers all the vital electronic circuit layout kinds present in sleek CMOS chips.
Introductory chapters on MOSFET physics and CMOS fabrication give you the heritage wanted for a great knowing of the circuit layout thoughts within the rest of the publication. Static CMOS common sense layout is given an in-depth therapy which covers either the research and layout of those kinds of circuits. Emphasis is on examining circuits to appreciate the connection among the layout and function in an built-in surroundings. Analytic versions and their software are offered to supply a uniform base for the layout philosophy constructed within the learn.
Dynamic circuit options reminiscent of cost sharing and cost leakage are awarded intimately after which utilized to dynamic common sense households comparable to domino cascades, self-resetting common sense, and dynamic single-phase designs. Differential common sense households are given a complete bankruptcy that discusses CVSL, CPL, and comparable layout kinds. Chip matters corresponding to interconnect modeling, crosstalk, and input/output circuits around out the insurance.
CMOS good judgment Circuit Design offers the reader with a chance to work out the sphere in a unified demeanour that emphasizes fixing layout difficulties utilizing a number of the common sense types to be had in CMOS.
CMOS good judgment Circuit Design is designed for use as either a textbook (either within the school room or for self-study) and as a reference for the VLSI chip designer.
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Additional resources for CMOS Logic Circuit Design
To be consistent with the surface scaling, we should also examine the effects on the vertical features. 39. 39(b), we have reduced both by the same scale factor S used on the surface dimensions. The most obvious effect is that the electrical characteristics of the device will be altered. To see this, consider first the process transconductance (where we will omit the prime to avoid confusion with the notation used for the scaled device). A large value of k is desirable, and this is achieved by increasing the oxide capacitance This, in turn, requires that we reduce the oxide thickness If we subject this to the same scaling factor and write Geometric Scaling Theory 39 as shown, then the oxide capacitance in the scaled device becomes This gives the new scaled process transconductance as being increased to Similarly, the device transconductance scales according to since the aspect ratio is invariant.
Both can be analyzed by performing a more detailed examination of the electric fields and charge distributions. Short-Channel Effect Short-channel effects are important when the channel length L is small, typically when L is reduced below about or so. The main result is that the threshold voltage is reduced below the value 46 found using the long-channel analysis. 43. The origin of the short channel reduction of the threshold voltage is due to the fact that the gate voltage (and hence, the threshold voltage) does not support all of the bulk charge with an area of WL underneath the gate.
The channel width W defines the width of the current flow path, and the aspect ratio is (W/L). L’ is again used to represent the drawn channel length. The power supply connection to the n-well is shown explicitly in the layout; this bias is critical to the operation of the device, and the 7 The concept of an n-well is discussed in Chapter 2. 20 contacts are usually applied quite liberally whenever space permits. 21 (a). When we show the MOSFET as a 4-terminal device, the only difference between the nFET and pFET symbols is in the direction of the arrow on the bulk terminal.