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Additional resources for Charge transport in disordered solids with applications in electronics
To check Mott’s assumption on the minimum metallic conductivity and to obtain reliable information about the features of electronic states and the behavior of the conductivity near the mobility edge, one should use low-temperature measurements in the region of the metal–insulator transition under the conditions where the Fermi level is located in the immediate vicinity of the mobility edge. 2 Extended-state conduction near the metal–insulator transition The metal–insulator transition was observed in numerous disordered solids where the position of the Fermi level with respect to the mobility edge could be varied.
2 Extended-state conduction near the metal–insulator transition The metal–insulator transition was observed in numerous disordered solids where the position of the Fermi level with respect to the mobility edge could be varied. This can be achieved, for example, in doped crystalline semiconductors by varying the impurity concentration and compensation. There also exists a possibility to finely tune the mobility edge by applying magnetic field , uniaxial stress , or by transmutation doping [66, 67].
19), in two dimensions, the magnetoresistance varies logarithmically with B. Lee  has shown that magnetic impurities destroy the coherence, so that on a length scale greater than Ls = Dτ s , where t s is the spin-flip time, the conductivity is no longer dependent on length. In the case of spin–orbit coupling, the quantum correction to the classical (Drude) conductivity is positive and the effect of the spin–orbit interaction is sometimes called weak anti-localization . It should be noted that for low-mobility samples and at low temperatures, which are needed for the observation of weak-localization corrections so that condition L ϕ >> l can be satisfied, the cutoff length can be greater than the sample size L.