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Polarization properties of InGaA1P lasers was given by Boermans et al. (1990). --~HH TM transition is zero (Bastard, 1991). On the other hand, for complete population of the LH-subband, a dominance of the TM polarized radiation will be found. In fact, the lasers made from such material will lase TM because that polarization has the highest gain. -. HH transition is not zero but equals one quarter of that for the TM polarization (Bastard, 1991). For experimental evaluation, a suitable method is to measure the so-called p parameter of the spontaneous radiation emitted from the side faces as a function of current and temperature.

From the photoluminescence line widths and peak positions, it also follows that the interface abruptness of the QW is less than two monolayers. l 4O0 350 > E ~ c- 300 250 r 200 E 150 C e-hh 1-" ~ c 0 100 e-lh e-hh 50 0 ! 8: Confinement energies as a function of well thickness obtained from photoluminescence and photoluminescence excitation spectra of the structure of Fig. 7. (1991). 9 Journal of Crystal Growth. 4 Q u a n t u m wells and strain in laser diodes 25 In visible red semiconductor lasers, quantum confinement effects are employed to shorten the wavelength.

I 1000 253 K .... liA,,l ,0, .. " o ' O ' I , . 4 D . O . 0 . 4 .... o.. 12: Variation of threshold current with strain for red visible lasers (InGaP) (a), near infrared (GaAsP for tensile and InGaAs for compressive strain) (b) and long-wavelength lasers (InGaAs/InP) (c). polarization properties of InGaA1P lasers was given by Boermans et al. (1990). --~HH TM transition is zero (Bastard, 1991). On the other hand, for complete population of the LH-subband, a dominance of the TM polarized radiation will be found.

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